| PART |
Description |
Maker |
| DS1245Y-100-IND DS1245Y-120-IND DS1245YP-70 DS1245 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1646-120 DS1646P-120 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1630Y-70-IND DS1630Y-100-IND DS1630Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Coilcraft, Inc.
Omron Electronics, LLC
|
| DS1275 DS1270Y-70-IND DS1270Y-100-IND DS1270AB-70- |
NVRAM (Battery Based) NVRAM中（基于电池
IC,LINE TRANSCEIVER,CMOS,1 DRIVER,1 RCVR,DIP,8PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| CAT22C12P-20 CAT22C12P-30 CAT22C12PI-30 CAT22C12PI |
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
ITT, Corp.
|
| U632H64BDC45 U632H64BD1C45 U632H64BSC45 U632H64DC4 |
Precision single operational amplifier
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Glenair, Inc.
|
| M40Z300MH1E M40Z300MH1F M40Z300MH6E M40Z300MH6F M4 |
5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
| M40Z111 M40Z111MH M40Z111SH M40Z111W M40Z111WMH M4 |
NVRAM CONTROLLER for up to TWO LPSRAM
|
意法半导
STMicroelectronics
|
| M41T56M6E M41T56M6F M41T56-07 |
Serial real-time clock with 56 bytes NVRAM
|
STMicroelectronics
|
| M41T11MH6E M41T11MH6F M41T11M6E M41T11M6F |
Serial real-time clock with 56 bytes of NVRAM
|
STMicroelectronics
|
